Invention Grant
- Patent Title: Method and system for controlling plasma in semiconductor fabrication
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Application No.: US14836574Application Date: 2015-08-26
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Publication No.: US10395918B2Publication Date: 2019-08-27
- Inventor: Cheng-Tsung Wu , Po-Hsiung Leu , Ding-I Liu , Si-Wen Liao , Hsiang-Sheng Kung
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/02
Abstract:
A plasma processing system and a method for controlling a plasma in semiconductor fabrication are provided. The system includes a remote plasma module configured to generate a plasma. The system further includes a compound mixing member configured to receive the plasma. The system also includes a processing chamber configured to receive the plasma from the compound mixing member for processing. In addition, the system includes a detection module configured to monitor the plasma in the compound mixing member.
Public/Granted literature
- US20160343625A1 METHOD AND SYSTEM FOR CONTROLLING PLASMA IN SEMICONDUCTOR FABRICATION Public/Granted day:2016-11-24
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