Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15610642Application Date: 2017-06-01
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Publication No.: US10396073B2Publication Date: 2019-08-27
- Inventor: Li-Wei Feng , Chien-Ting Ho , Shih-Fang Tzou
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710307435 20170504
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L27/108 ; H01L21/8234
Abstract:
A method for fabricating semiconductor device includes the steps of first forming a first trench and a second trench in a substrate and then forming a shallow trench isolation (STI) in the first trench, in which the STI comprises a top portion and a bottom portion and a top surface of the top portion is even with or higher than a bottom surface of the second trench. Next, a conductive layer is formed in the first trench and the second trench to form a first gate structure and a second gate structure.
Public/Granted literature
- US20180323190A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-11-08
Information query
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