Invention Grant
- Patent Title: Cross-point memory and methods for fabrication of same
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Application No.: US16045516Application Date: 2018-07-25
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Publication No.: US10396125B2Publication Date: 2019-08-27
- Inventor: Paolo Fantini , Cristina Casellato , Fabio Pellizzer
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/764 ; H01L21/768 ; H01L27/115 ; H01L27/11521 ; H01L27/11524 ; H01L27/1157 ; H01L45/00 ; H01L27/24
Abstract:
A cross-point memory array includes a plurality of variable resistance memory cell pillars. Adjacent memory cell pillars are separated by a partially filled gap that includes a buried void. In addition, adjacent memory cell pillars include storage material elements that are at least partially interposed by the buried void.
Public/Granted literature
- US20180358411A1 CROSS-POINT MEMORY AND METHODS FOR FABRICATION OF SAME Public/Granted day:2018-12-13
Information query
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