- 专利标题： Solar cell with interdigitated back contacts formed from high and low work-function-tuned silicides of the same metal
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申请号： US13103583申请日： 2011-05-09
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公开(公告)号： US10396229B2公开(公告)日： 2019-08-27
- 发明人: Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
- 申请人： Joel P. De Souza , Harold J. Hovel , Daniel A. Inns , Jeehwan Kim , Christian Lavoie , Devendra K. Sadana , Katherine L. Saenger , Davood Shahrjerdi , Zhen Zhang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Law Office of Charles W. Peterson, Jr.
- 代理商 Louis J. Percello, Esq.; Erik K. Johnson, Esq.
- 主分类号： H01L31/07
- IPC分类号： H01L31/07 ; H01L31/0224 ; H01L31/18 ; H01L31/068
摘要：
A solar cell having n-type and p-type interdigitated back contacts (IBCs), which cover the entire back surface of the absorber layer. The spatial separation of the IBCs is in a direction perpendicular to the back surface, thus providing borderless contacts having a zero-footprint separation. As the contacts are on the back, photons incident on the cell's front surface can be absorbed without any shadowing.