Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15977479Application Date: 2018-05-11
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Publication No.: US10401565B2Publication Date: 2019-09-03
- Inventor: Tatsuya Usami
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2017-123611 20170623
- Main IPC: G02B6/12
- IPC: G02B6/12

Abstract:
An object of the present invention is to reduce the manufacturing cost of a semiconductor device. A semiconductor device includes a SOI substrate that has an optical waveguide including a semiconductor layer. The optical waveguide is covered with an interlayer insulating film. Wiring parts are formed on the interlayer insulating film. Moreover, a thin film part having a smaller thickness than the wiring parts is formed above the optical waveguide and is integrated with the wiring parts.
Public/Granted literature
- US20180372950A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-12-27
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