Invention Grant
- Patent Title: Forming single diffusion break and end isolation region after metal gate replacement, and related structure
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Application No.: US15811965Application Date: 2017-11-14
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Publication No.: US10403548B2Publication Date: 2019-09-03
- Inventor: Hui Zang , Hong Yu
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/06 ; H01L27/088

Abstract:
The disclosure relates to integrated circuit (IC) structures with a single diffusion break (SDB) and end isolation regions, and methods of forming the same after forming a metal gate. A structure may include: a plurality of fins positioned on a substrate; a plurality of metal gates each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on and extending transversely across the plurality of fins between a pair of the plurality of metal gates; at least one single diffusion break (SDB) positioned within the insulator region and one of the plurality of fins; an end isolation region positioned laterally adjacent to a lateral end of one of the plurality of metal gates; and an insulator cap positioned on an upper surface of at least a portion of one of the plurality of metal gates.
Public/Granted literature
Information query
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