- Patent Title: Array substrate, method for fabricating the same and display device
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Application No.: US14429501Application Date: 2014-05-29
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Publication No.: US10403651B2Publication Date: 2019-09-03
- Inventor: Heecheol Kim , Youngsuk Song , Seongyeol Yoo , Seungjin Choi
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Banner & Witcoff, Ltd.
- Priority: CN201310739761 20131226
- International Application: PCT/CN2014/078848 WO 20140529
- International Announcement: WO2015/096392 WO 20150702
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L23/31 ; H01L23/00 ; H01L29/66 ; H01L23/528 ; H01L21/56 ; H01L21/441 ; H01L29/24 ; H01L23/522 ; H01L29/786 ; H01L29/417 ; H01L29/423 ; H01L21/768

Abstract:
An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate includes: a gate electrode of a TFT and a gate insulation layer sequentially formed on a base substrate; a semiconductor active layer, an etch stop layer and a source electrode and a drain electrode of the TFT sequentially formed on a part of the gate insulation layer that corresponds to the gate electrode of the TFT, the source and drain electrodes of the TFT are respectively in contact with the semiconductor active layer by way of via holes. The array substrate further includes: a first insulation layer formed between the gate electrode of the TFT and the gate insulation layer and the gate electrode is in contact with the gate insulation layer at a channel region of the TFT between the source electrode and the drain electrode of the TFT.
Public/Granted literature
- US20160027812A1 ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE Public/Granted day:2016-01-28
Information query
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