Invention Grant
- Patent Title: Random telegraph noise native device for true random number generator and noise injection
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Application No.: US16038702Application Date: 2018-07-18
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Publication No.: US10416965B2Publication Date: 2019-09-17
- Inventor: Chia-yu Chen , Damon Farmer , Suyog Gupta , Shu-jen Han
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: G06F7/58
- IPC: G06F7/58 ; H01L29/423
Abstract:
A method (and system) for generating random numbers includes setting a drain voltage Vd on an MOSFET (metal oxide semiconductor field effect transistor) device and a gate voltage Vg of the MOSFET device so that the MOSFET device comprises a noise source configured in a manner such as to tune as desired a random number statistical distribution of an output of the MOSFET device. An output voltage of the MOSFET is provided as an input signal into a low noise amplifier and an output voltage of the low noise amplifier provides values for a random number generator.
Public/Granted literature
- US20180341462A1 Random Telegraph Noise Native Device for True Random Number Generator and Noise Injection Public/Granted day:2018-11-29
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