- 专利标题: Image sensor based on avalanche photodiodes
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申请号: US16117966申请日: 2018-08-30
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公开(公告)号: US10418409B2公开(公告)日: 2019-09-17
- 发明人: Peiyan Cao , Yurun Liu
- 申请人: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- 申请人地址: CN Shenzhen
- 专利权人: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- 当前专利权人: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.
- 当前专利权人地址: CN Shenzhen
- 代理机构: IPro, PLLC
- 代理商 Qian Gu; Na Xu
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L27/146 ; H01L31/107 ; G02B21/36
摘要:
Disclosed herein is an apparatus comprising: an array of avalanche photodiodes (APDs), each of the APDs comprising an absorption region and an amplification region; wherein the absorption region is configured to generate charge carriers from a photon absorbed by the absorption region; wherein the amplification region comprises a junction with an electric field in the junction; wherein the electric field is at a value sufficient to cause an avalanche of charge carriers entering the amplification region, but not sufficient to make the avalanche self-sustaining; wherein the junctions of the APDs are discrete.
公开/授权文献
- US20180374890A1 IMAGE SENSOR BASED ON AVALANCHE PHOTODIODES 公开/授权日:2018-12-27
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