Invention Grant
- Patent Title: Semiconductor devices on two sides of an isolation layer
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Application No.: US15249143Application Date: 2016-08-26
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Publication No.: US10420171B2Publication Date: 2019-09-17
- Inventor: Sinan Goktepeli
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H04W88/02 ; H01L27/12 ; H01L23/66 ; H01L21/84 ; H01L21/762 ; H01L21/18 ; H01L21/768 ; H01L23/485 ; H01L27/092 ; H01L21/8238 ; H01L27/06

Abstract:
An integrated circuit device includes only semiconductor devices with a same first polarity on one side of an insulator layer and only semiconductor devices with a different second polarity on an opposite side of the insulator layer to reduce size and complexity of the integrated circuit device as well as reducing the process steps associated with fabricating the integrated circuit device. Shared contacts between backside source/drain regions or spacers of the semiconductor devices with the first polarity and front-side source/drain regions or spacers of the semiconductor devices with the first polarity are used to connect the semiconductor devices on opposite sides of the insulator layer.
Public/Granted literature
- US20180061766A1 SEMICONDUCTOR DEVICES ON TWO SIDES OF AN ISOLATION LAYER Public/Granted day:2018-03-01
Information query
IPC分类: