A magnetic field sensor is disclosed that includes at least one magneto-resistive spin-valve sensor element configured to sense a first magnetic field component H1, and at least one AMR sensor element configured to sense a second magnetic field component H2 which is perpendicular to the first magnetic field component H1. In one example the at least one magneto-resistive spin-valve sensor element is a tunnel magneto-resistive (TMR) or giant magneto-resistive (GMR) sensor, and in one example the AMR sensor element includes an antiferromagnetic layer coupled to a ferromagnetic layer generating a bias magnetization for the AMR sensor element.