Invention Grant
- Patent Title: Trench structure and method
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Application No.: US16173385Application Date: 2018-10-29
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Publication No.: US10424549B2Publication Date: 2019-09-24
- Inventor: Fu-Chiang Kuo , Shih-Chi Kuo , Tsung-Hsien Lee , Ying-Hsun Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L23/58 ; H01L23/522 ; H01L23/528 ; H01L23/544 ; H01L21/56 ; H01L23/29 ; H01L21/78 ; H01L23/532 ; H01L51/52
Abstract:
A method of forming a trench structure is provided. The method includes depositing a silicon carbide (SiC) layer on a top metal layer, forming a first passivation layer on the SiC layer, removing a portion of the first passivation layer to form a first opening, forming a second passivation layer on the first passivation layer, the second passivation layer including a first portion in the first opening, and forming a second opening by removing a part of the first portion of the second passivation layer. The forming the second opening exposes the top metal layer.
Public/Granted literature
- US20190067215A1 TRENCH STRUCTURE AND METHOD Public/Granted day:2019-02-28
Information query
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