Invention Grant
- Patent Title: Semiconductor devices including reversible and one-time programmable magnetic tunnel junctions
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Application No.: US16290102Application Date: 2019-03-01
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Publication No.: US10431276B2Publication Date: 2019-10-01
- Inventor: Boyoung Seo , Yongkyu Lee , Gwanhyeob Koh , Choong Jae Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0144117 20151015; KR10-2015-0160551 20151116
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C17/02 ; G11C11/16 ; H01L43/10 ; H01L43/08 ; H01L27/22
Abstract:
A semiconductor device includes a memory cell array, which further includes an array of first magnetic memory cells and an array of second magnetic memory cells. Each of the first magnetic memory cells includes a first magnetic tunnel junction structure having a reversible resistance state, and each of the second magnetic memory cells includes a second magnetic tunnel junction structure having a one-time programmable (OTP) resistance state.
Public/Granted literature
- US20190198077A1 SEMICONDUCTOR DEVICES INCLUDING REVERSIBLE AND ONE-TIME PROGRAMMABLE MAGNETIC TUNNEL JUNCTIONS Public/Granted day:2019-06-27
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