Invention Grant
- Patent Title: Boosted channel programming of memory
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Application No.: US15928856Application Date: 2018-03-22
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Publication No.: US10431310B2Publication Date: 2019-10-01
- Inventor: Mark A. Helm , Kalyan C. Kavalipurapu
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C16/34 ; G11C11/56 ; G11C16/04
Abstract:
Methods of operating a memory include boosting a channel voltage of a memory cell selected for programming to a particular voltage level for a particular programming pulse, boosting the channel voltage of the memory cell selected for programming to a second voltage level, greater than the particular voltage level, for a subsequent programming pulse, and boosting the channel voltage of the memory cell selected for programming to a third voltage level, greater than the second voltage level, for a next subsequent programming pulse.
Public/Granted literature
- US20180308551A1 BOOSTED CHANNEL PROGRAMMING OF MEMORY Public/Granted day:2018-10-25
Information query
