Invention Grant
- Patent Title: Plasma processing apparatus and plasma processing method
-
Application No.: US16003954Application Date: 2018-06-08
-
Publication No.: US10431433B2Publication Date: 2019-10-01
- Inventor: Koichi Nagami , Natsumi Torii
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2017-116950 20170614
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
In a plasma processing apparatus, a controller controls one or both of a first high frequency power supply and a second high frequency power supply to periodically stop the supply of one or both of the first high frequency power and the second high frequency power. The controller also controls a switching unit to apply a DC voltage to a focus ring from a first time after a predetermined period of time in which a self-bias voltage of a lower electrode is decreased from a start point of each period in which one or both of the first high frequency power and the second high frequency power are supplied and to stop the application of the DC voltage to the focus ring during each period in which the supply of one or both of the first high frequency power and the second high frequency power is stopped.
Public/Granted literature
- US20180366305A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD Public/Granted day:2018-12-20
Information query