- 专利标题： Gas composition for dry etching and dry etching method
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申请号： US16167104申请日： 2018-10-22
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公开(公告)号： US10431472B2公开(公告)日： 2019-10-01
- 发明人: Yoshinao Takahashi , Korehito Kato , Tetsuya Fukasawa , Yoshihiko Iketani
- 申请人： Kanto Denka Kogyo Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： KANTO DENKA KOGYO CO., LTD.
- 当前专利权人： KANTO DENKA KOGYO CO., LTD.
- 当前专利权人地址： JP Tokyo
- 代理机构： Young & Thompson
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/02 ; C09K13/00
摘要：
A silicon oxide film or a silicon nitride film is selectively etched by using an etching gas composition including a hydrofluorocarbon that has an unsaturated bond in its molecule and is represented by CxHyFz, wherein x is an integer of from 3 to 5, and relationships y+z≤2x and y≤z are satisfied. Also, a silicon oxide film is etched with high selectivity relative to a silicon nitride film by controlling the ratio among the hydrofluorocarbon, oxygen, argon, etc., included in the hydrofluorocarbon-containing etching gas composition.
公开/授权文献
- US20190057878A1 GAS COMPOSITION FOR DRY ETCHING AND DRY ETCHING METHOD 公开/授权日：2019-02-21
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