- 专利标题： Semiconductor device and method for manufacturing semiconductor device
-
申请号： US15438268申请日： 2017-02-21
-
公开(公告)号： US10431516B2公开(公告)日： 2019-10-01
- 发明人: Osamu Miyata , Masaki Kasai , Shingo Higuchi
- 申请人： ROHM CO., LTD.
- 申请人地址： JP Kyoto
- 专利权人： ROHM CO., LTD.
- 当前专利权人： ROHM CO., LTD.
- 当前专利权人地址： JP Kyoto
- 优先权： JP2004-332175 20041116; JP2005-007983 20050114; JP2005-188732 20050628; JP2005-224421 20050802
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/31 ; H01L23/00 ; H01L23/29 ; H01L23/528 ; H01L23/544 ; H01L21/78
摘要：
A semiconductor device includes a semiconductor chip having a passivation film, a stress relieving layer provided on the passivation film, and a groove formed in a periphery of a surface of the semiconductor chip, the groove being provided inside of an edge of the semiconductor chip, wherein the stress relieving layer is partly disposed in the groove.