Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16114900Application Date: 2018-08-28
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Publication No.: US10431529B2Publication Date: 2019-10-01
- Inventor: Shoji Yasunaga , Akihiro Koga
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C
- Priority: JP2013-058545 20130321; JP2013-058546 20130321; JP2013-058547 20130321; JP2013-058548 20130321; JP2013-058549 20130321; JP2013-011051 20140124
- Main IPC: H01L23/50
- IPC: H01L23/50 ; H01L23/495 ; H01L23/52 ; H01L23/00 ; H01L23/433 ; H01L23/31 ; H01L23/367 ; H01L23/373
Abstract:
A semiconductor device includes two or more semiconductor elements, a lead with island portions on which the semiconductor elements are mounted, a heat dissipation member for dissipating heat from the island portions, a bonding layer bonding the island portions and the heat dissipation member, and a sealing resin covering the semiconductor elements, the island portions and a part of the heat dissipation member. The bonding layer includes mutually spaced individual regions provided for the island portions, respectively.
Public/Granted literature
- US20180366397A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-12-20
Information query
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