Invention Grant
- Patent Title: Semiconductor devices
-
Application No.: US15842050Application Date: 2017-12-14
-
Publication No.: US10431673B2Publication Date: 2019-10-01
- Inventor: Ju Youn Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2017-0072389 20170609
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L29/78 ; H01L29/417 ; H01L29/165

Abstract:
A semiconductor device includes a fin protruding from a substrate and extending in a first direction, source/drain regions on the fin, a recess between the source/drain regions, a device isolation region including a capping layer extending along an inner surface of the recess and a device isolating layer on the capping layer to fill the recess, a dummy gate structure on the device isolation region and including a dummy gate insulating layer, outer spacers on opposite sidewalls of the dummy gate structure, first inner spacers between the dummy gate structure and the outer spacers, and a second inner spacer between the device isolation region and the dummy gate insulating layer.
Public/Granted literature
- US20180358450A1 SEMICONDUCTOR DEVICES Public/Granted day:2018-12-13
Information query
IPC分类: