- 专利标题： Vertical vacuum channel transistor
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申请号： US15693952申请日： 2017-09-01
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公开(公告)号： US10431682B2公开(公告)日： 2019-10-01
- 发明人: Qing Liu , Ruilong Xie , Chun-chen Yeh
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES, INC. , STMicroelectronics, Inc.
- 申请人地址： US NY Armonk US TX Coppell KY
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES, INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,STMICROELECTRONICS, INC.,GLOBALFOUNDRIES, INC.
- 当前专利权人地址： US NY Armonk US TX Coppell KY
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L21/306 ; H01L21/02 ; H01L21/324 ; H01L29/417
摘要：
A method of fabricating features of a vertical transistor include performing a first etch process to form a first portion of a fin in a substrate; depositing a spacer material on sidewalls of the first portion of the fin; performing a second etch process using the spacer material as a pattern to elongate the fin and form a second portion of the fin in the substrate, the second portion having a width that is greater than the first portion; oxidizing a region of the second portion of the fin beneath the spacer material to form an oxidized channel region; and removing the oxidized channel region to form a vacuum channel.
公开/授权文献
- US20180102433A1 VERTICAL VACUUM CHANNEL TRANSISTOR 公开/授权日：2018-04-12
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