- Patent Title: Structure and formation method of semiconductor device structure
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Application No.: US15687723Application Date: 2017-08-28
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Publication No.: US10431687B2Publication Date: 2019-10-01
- Inventor: Che-Cheng Chang , Chih-Han Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/49 ; H01L29/423 ; H01L21/3213
Abstract:
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure. The gate stack includes a first portion and a second portion adjacent to the fin structure, and the first portion is wider than the second portion.
Public/Granted literature
- US20170358681A1 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2017-12-14
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