Invention Grant
- Patent Title: Regulation of an RF amplifier
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Application No.: US15609639Application Date: 2017-05-31
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Publication No.: US10432154B2Publication Date: 2019-10-01
- Inventor: Lionel Vogt
- Applicant: STMicroelectronics SA
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics SA
- Current Assignee: STMicroelectronics SA
- Current Assignee Address: FR Montrouge
- Agency: Slater Matsil, LLP
- Priority: FR1661610 20161129
- Main IPC: H03G3/10
- IPC: H03G3/10 ; H03F3/42 ; H03F1/02 ; H03F1/30 ; H03F3/189 ; H03F3/193 ; H03G3/30

Abstract:
A radiofrequency (RF) amplifier includes an input terminal, an output terminal, and a power supply and biasing stage having an output coupled to the input terminal. An amplification stage of the RF amplifier includes a first transistor having a control terminal coupled to the input terminal and a first conduction terminal coupled to the output terminal. The power supply and biasing stage is configured to generate a bias voltage at the control terminal of the first transistor to simultaneously regulate a power supply voltage of the amplification stage to a first voltage and a bias current of the amplification stage to a first current.
Public/Granted literature
- US20180152155A1 REGULATION OF AN RF AMPLIFIER Public/Granted day:2018-05-31
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