Invention Grant
- Patent Title: Manufacturing method of circuit structure embedded with heat-dissipation block
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Application No.: US14460365Application Date: 2014-08-15
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Publication No.: US10433413B2Publication Date: 2019-10-01
- Inventor: Cheng-Po Yu , Ming-Chia Li
- Applicant: Unimicron Technology Corp.
- Applicant Address: TW Taoyuan
- Assignee: Unimicron Technology Corp.
- Current Assignee: Unimicron Technology Corp.
- Current Assignee Address: TW Taoyuan
- Agency: JCIPRNET
- Main IPC: H05K3/30
- IPC: H05K3/30 ; H05K1/02 ; H05K3/40 ; H05K1/18 ; H05K3/46

Abstract:
A manufacturing method of circuit structure embedded with heat-dissipation block including the following steps is provided. A core board including a first dielectric layer and two first conductive layers located on two opposite sides of the first dielectric layer is provided. A through hole penetrated the core board is formed. A heat-dissipation block is disposed into the through hole. Two inner-layer circuits are formed on two opposite sides of the core board. At least one build-up structure is bonded on the core board, wherein the build-up structure includes a second dielectric layer and a second conductive layer, and the second dielectric layer is located between the second conductive layer and the core board. A cavity is formed on a predetermined region of the build-up structure, and the cavity is communicated with the corresponding inner-layer circuit. Another manufacturing method of circuit structure embedded with heat-dissipation block is also provided.
Public/Granted literature
- US20160050771A1 MANUFACTURING METHOD OF CIRCUIT STRUCTURE EMBEDDED WITH HEAT-DISSIPATION BLOCK Public/Granted day:2016-02-18
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