发明授权
- 专利标题： Chip-to-chip and chip-to-substrate interconnections in multi-chip semiconductor devices
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申请号： US15993523申请日： 2018-05-30
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公开(公告)号： US10438894B1公开(公告)日： 2019-10-08
- 发明人: Mukta Farooq , Koushik Ramachandran , Eric Perfecto , Ian Melville
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 代理商 Hunter Auyang
- 主分类号： H01L23/495
- IPC分类号： H01L23/495 ; H01L23/538 ; H01L23/498 ; H01L25/065 ; H01L23/00
摘要：
A multi-chip semiconductor device with multi-level structure including a substrate with a top substrate surface, a cavity with a depth in the substrate, a first chip having a top first chip surface with a first chip height, optionally including a second chip having a top second chip surface with a second chip height, and a connecting passive chip bridging the first chip, the second chip and the substrate by solder bumps wherein the solder bumps enable the connecting passive chip to be level.
信息查询
IPC分类:
