- 专利标题： IGBT with dV/dt controllability
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申请号： US15940708申请日： 2018-03-29
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公开(公告)号： US10439055B2公开(公告)日： 2019-10-08
- 发明人: Alexander Philippou , Christian Jaeger , Johannes Georg Laven , Antonio Vellei
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： Infineon Technologies AG
- 当前专利权人： Infineon Technologies AG
- 当前专利权人地址： DE Neubiberg
- 代理机构： Murphy, Bilak & Homiller, PLLC
- 优先权： DE102017107174 20170404
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L29/66 ; H01L29/06 ; H01L29/10 ; H01L29/40
摘要：
An IGBT having a barrier region is presented. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by means of the drift region. The barrier region can be electrically floating.
公开/授权文献
- US20180286971A1 IGBT with dV/dt Controllability 公开/授权日：2018-10-04
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