Invention Grant
- Patent Title: Methods for creating a semiconductor wafer having profiled doping and wafers and solar cell components having a profiled field, such as drift and back surface
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Application No.: US15546030Application Date: 2015-10-14
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Publication No.: US10439095B2Publication Date: 2019-10-08
- Inventor: Ralf Jonczyk , Brian D. Kernan , G. D. Stephen Hudelson , Adam M. Lorenz , Emanuel M. Sachs
- Applicant: 1366 TECHNOLOGIES INC.
- Applicant Address: US MA Bedford
- Assignee: 1366 TECHNOLOGIES, INC.
- Current Assignee: 1366 TECHNOLOGIES, INC.
- Current Assignee Address: US MA Bedford
- Agency: The Marbury Law Group, PLLC
- International Application: PCT/US2015/055460 WO 20151014
- International Announcement: WO2016/122731 WO 20160804
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/18 ; H01L31/0224 ; H01L31/068 ; H01L31/056 ; H01L31/0216 ; H01L31/0288 ; C30B29/06 ; C30B28/04 ; C30B19/12 ; C30B35/00 ; C30B31/04 ; C30B11/00 ; C30B31/02

Abstract:
A semiconductor wafer forms on a mold containing a dopant. The dopant dopes a melt region adjacent the mold. There, dopant concentration is higher than in the melt bulk. A wafer starts solidifying. Dopant diffuses poorly in solid semiconductor. After a wafer starts solidifying, dopant cannot enter the melt. Afterwards, the concentration of dopant in the melt adjacent the wafer surface is less than what was present where the wafer began to form. New wafer regions grow from a melt region whose dopant concentration lessens over time. This establishes a dopant gradient in the wafer, with higher concentration adjacent the mold. The gradient can be tailored. A gradient gives rise to a field that can function as a drift or back surface field. Solar collectors can have open grid conductors and better optical reflectors on the back surface, made possible by the intrinsic back surface field.
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