A method of fabricating an RF filter comprising an array of resonators, the method comprising the steps of: (a) Obtaining a removable carrier with release layer; (b) Growing a piezoelectric film on a removable carrier; (c) Applying a first electrode to the piezoelectric film; (d) Obtaining a backing membrane on a cover, with or without prefabricated cavities between the backing film and cover; (e) Attaching the backing membrane to the first electrode; (f) Detaching the removable carrier; (g) Measuring and trimming the piezoelectric film as necessary; (h) Selectively etching away the piezoelectric layer to fabricate discrete resonator islands; (i) Etching down through coatings backing membrane, silicon dioxide and into silicon handle to form trenches; (j) Applying passivation layer into the trenches and around the piezoelectric islands; (k) Depositing a second electrode layer over the dielectric and piezoelectric film islands; (l) Applying connections for subsequent electrical coupling to an interposer; (m) Selectively remove second electrode material leaving coupled resonator arrays; (n) Create gasket around perimeter of the resonator array; (o) Thinning down cover of handle to desired thickness; (p) Optionally fabricating cavities between the silicon membrane and handle; (q) Dicing the wafer into flip chip single unit filter arrays; (r) Obtaining an interposer; (s) Optionally applying a dam to the interposer surface to halt overfill flow; (t) Coupling the flip chip single unit filter array to pads of the interposer by reflow of the solder cap; (u) Encapsulating with polymer overfill; and (v) Singulating into separate filter modules.