Invention Grant
- Patent Title: Method for fabricating a curve on sidewalls of a fin-shaped structure
-
Application No.: US16036831Application Date: 2018-07-16
-
Publication No.: US10446447B2Publication Date: 2019-10-15
- Inventor: Yi-Fan Li , I-Cheng Hu , Chun-Jen Chen , Tien-I Wu , Yu-Shu Lin , Chun-Yuan Wu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW106109701A 20170323
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L27/088 ; H01L29/10 ; H01L21/762 ; H01L21/308 ; H01L21/3065 ; H01L21/8238 ; H01L29/78 ; H01L21/311
Abstract:
A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a liner on the fin-shaped structure; and removing the liner and part of the fin-shaped structure so that a sidewall of the fin-shaped structure comprises a curve. Moreover, the method includes forming an epitaxial layer around the sidewall of the fin-shaped structure while a top surface of the fin-shaped structure is exposed.
Public/Granted literature
- US20180323302A1 METHOD FOR FABRICATING A CURVE ON SIDEWALLS OF A FIN-SHAPED STRUCTURE Public/Granted day:2018-11-08
Information query
IPC分类:
