Invention Grant
- Patent Title: Apparatuses and methods for scalable memory
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Application No.: US16397038Application Date: 2019-04-29
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Publication No.: US10446528B2Publication Date: 2019-10-15
- Inventor: Feng Lin , Yuanzhong Wan
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C7/02
- IPC: G11C7/02 ; G11C11/00 ; H01L25/065 ; G11C11/4076 ; G11C11/4091 ; G11C7/10 ; G11C7/22

Abstract:
Apparatuses and methods are provided for scalable memory. An example apparatus comprises a logic component, a plurality of memory components adjacent to and coupled to one another and the logic component, a plurality of memory component programmable delay lines (PDLs), of the plurality of memory component PDLs associated with a respective one of the plurality of memory components, and a logic component programmable delay line (LPDL) coupled to the logic component and each of the plurality of memory component PDLs.
Public/Granted literature
- US20190252356A1 APPARATUSES AND METHODS FOR SCALABLE MEMORY Public/Granted day:2019-08-15
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