Invention Grant
- Patent Title: Nonvolatile storage using low latency and high latency memory
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Application No.: US16162266Application Date: 2018-10-16
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Publication No.: US10452541B2Publication Date: 2019-10-22
- Inventor: Federico Pio
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F12/06
- IPC: G06F12/06 ; G06F3/06 ; G06F12/02
Abstract:
Nonvolatile storage includes first and second memory types with different read latencies. FLASH memory and phase change memory are examples. A first portion of a data block is stored in the phase change memory and a second portion of the data block is stored in the FLASH memory. The first portion of the data block is accessed prior to the second portion of the data block during a read operation.
Public/Granted literature
- US20190087330A1 NONVOLATILE STORAGE USING LOW LATENCY AND HIGH LATENCY MEMORY Public/Granted day:2019-03-21
Information query
