Invention Grant
- Patent Title: Method of forming oxide layer
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Application No.: US15644821Application Date: 2017-07-09
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Publication No.: US10453677B2Publication Date: 2019-10-22
- Inventor: Cheng-Hsu Huang , Jui-Min Lee , Ching-Hsiang Chang , Yi-Wei Chen , Wei-Hsin Liu , Shih-Fang Tzou
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710455943 20170616
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/76 ; H01L21/762 ; H01L27/108
Abstract:
A method of forming an oxide layer includes the following steps. A substrate is provided. A surface of the substrate is treated to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate. The present invention also provides a method of forming an oxide layer including the following steps. A substrate is provided. A surface of the substrate is treated with a hydrogen peroxide (H2O2) solution or a surface of the substrate is treated with oxygen containing gas, to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate.
Public/Granted literature
- US20180366323A1 METHOD OF FORMING OXIDE LAYER Public/Granted day:2018-12-20
Information query
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