Invention Grant
- Patent Title: Light-emitting device
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Application No.: US15838476Application Date: 2017-12-12
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Publication No.: US10453873B2Publication Date: 2019-10-22
- Inventor: Hiroyuki Miyake
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-257337 20131212; JP2014-242835 20141201
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L27/32

Abstract:
To provide a light-emitting device in which variation in luminance among pixels caused by variation in threshold voltage of transistors can be suppressed. The light-emitting device includes a transistor including a first gate and a second gate overlapping with each other with a semiconductor film therebetween, a first capacitor maintaining a potential difference between one of a source and a drain of the transistor and the first gate, a second capacitor maintaining a potential difference between one of the source and the drain of the transistor and the second gate, a switch controlling conduction between the second gate of the transistor and a wiring, and a light-emitting element to which drain current of the transistor is supplied.
Public/Granted literature
- US20180114799A1 LIGHT-EMITTING DEVICE Public/Granted day:2018-04-26
Information query
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