Invention Grant
- Patent Title: Semiconductor device and an electronic device
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Application No.: US15977556Application Date: 2018-05-11
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Publication No.: US10453946B2Publication Date: 2019-10-22
- Inventor: Akira Muto , Nobuya Koike , Masaki Kotsuji , Yukihiro Narita
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2013-125288 20130614
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L23/538 ; H01L23/495 ; H01L23/00 ; H01L29/78 ; H01L29/66 ; H01L21/48 ; H01L23/552
Abstract:
A semiconductor device and an electronic device are improved in performances by supporting a large current. An emitter terminal protrudes from a first side of a sealing body, and signal terminals protrude from a second sides of the sealing body. Namely, the side of the sealing body from which the emitter terminal protrudes and the side of the sealing body from which the signal terminals protrude are different. More particularly, the signal terminals protrude from the side of the sealing body opposite the side thereof from which the emitter terminal protrudes. Further, a second semiconductor chip including a diode formed therein is mounted over a first surface of a chip mounting portion in such a manner as to be situated between the emitter terminal and the a first semiconductor chip including an IGBT formed therein in plan view.
Public/Granted literature
- US20180261690A1 SEMICONDUCTOR DEVICE AND AN ELECTRONIC DEVICE Public/Granted day:2018-09-13
Information query
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