Invention Grant
- Patent Title: Integrated light emitting device, integrated sensor device, and manufacturing method
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Application No.: US16040701Application Date: 2018-07-20
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Publication No.: US10453985B2Publication Date: 2019-10-22
- Inventor: Thoralf Kautzsch
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE
- Agency: Design IP
- Priority: DE102015110496 20150630
- Main IPC: H01L31/173
- IPC: H01L31/173 ; G01N21/552 ; H01L33/00 ; H01L33/20 ; G02B6/12
Abstract:
The present disclosure relates to an integrated light emitting device. The integrated light emitting device comprises a substrate of semiconductor material, a light emitting unit integrated into the semiconductor material, and at least one cavity formed into the semiconductor material between the substrate and the light emitting unit. At least portions of the at least one cavity may be formed by Silicon-On-Nothing (SON) process steps.
Public/Granted literature
- US20180351027A1 INTEGRATED LIGHT EMITTING DEVICE, INTEGRATED SENSOR DEVICE, AND MANUFACTURING METHOD Public/Granted day:2018-12-06
Information query
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