Invention Grant
- Patent Title: Multi-layer, stress-isolation platform for a MEMS die
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Application No.: US15896749Application Date: 2018-02-14
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Publication No.: US10457547B2Publication Date: 2019-10-29
- Inventor: Wayne C. Long , Joseph L. Nguyen
- Applicant: DunAn Microstaq, Inc.
- Applicant Address: US TX Austin
- Assignee: DunAn Microstaq, Inc.
- Current Assignee: DunAn Microstaq, Inc.
- Current Assignee Address: US TX Austin
- Agency: MacMillan, Sobanski & Todd, LLC
- Main IPC: B81C1/00
- IPC: B81C1/00 ; B81C3/00 ; B81B7/00
Abstract:
A multi-layer, stress-isolation platform configured for attaching a MEMS die to a base includes a first platform, a first layer of attachment material between the base and the first platform and attaching the first platform to the base, a MEMS die, and a second layer of attachment material between the first platform and the MEMS die and attaching the MEMS die to the first platform.
Public/Granted literature
- US20180319654A1 MULTI-LAYER, STRESS-ISOLATION PLATFORM FOR A MEMS DIE Public/Granted day:2018-11-08
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