- 专利标题: Semiconductor device
-
申请号: US16036455申请日: 2018-07-16
-
公开(公告)号: US10459162B2公开(公告)日: 2019-10-29
- 发明人: Tetsuya Iida , Yasutaka Nakashiba
- 申请人: Renesas Electronics Corporation
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: McGinn I.P. Law Group, PLLC.
- 优先权: JP2017-170268 20170905
- 主分类号: G02B6/122
- IPC分类号: G02B6/122 ; G02B6/125 ; G02B6/12
摘要:
To provide a semiconductor device including a low-loss optical waveguide. The optical waveguide included in the semiconductor device has a core layer covered with first and second clad layers having respectively different refractive indices. A portion of the core layer is covered at a first ratio, that is, a ratio of the first clad layer to the second clad layer and at the same time, a second ratio, that is, a ratio of the second clad layer to the first clad layer. At this time, the first ratio and the second ratio are each a finite value more than 0.
公开/授权文献
- US20190072717A1 SEMICONDUCTOR DEVICE 公开/授权日:2019-03-07
信息查询