Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16036455Application Date: 2018-07-16
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Publication No.: US10459162B2Publication Date: 2019-10-29
- Inventor: Tetsuya Iida , Yasutaka Nakashiba
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn I.P. Law Group, PLLC.
- Priority: JP2017-170268 20170905
- Main IPC: G02B6/122
- IPC: G02B6/122 ; G02B6/125 ; G02B6/12

Abstract:
To provide a semiconductor device including a low-loss optical waveguide. The optical waveguide included in the semiconductor device has a core layer covered with first and second clad layers having respectively different refractive indices. A portion of the core layer is covered at a first ratio, that is, a ratio of the first clad layer to the second clad layer and at the same time, a second ratio, that is, a ratio of the second clad layer to the first clad layer. At this time, the first ratio and the second ratio are each a finite value more than 0.
Public/Granted literature
- US20190072717A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-03-07
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