- 专利标题: Optimized electromigration analysis
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申请号: US15008546申请日: 2016-01-28
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公开(公告)号: US10460070B2公开(公告)日: 2019-10-29
- 发明人: Chin-Shen Lin , Ching-Shun Yang , Hsien Yu-Tseng
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号: G06F17/50
- IPC分类号: G06F17/50
摘要:
A method of determining electromigration (EM) compliance of a circuit is performed. The method includes providing a layout of the circuit, the layout comprising one or more metal lines, and changing a property of one or more of the one or more metal lines within one or more nets of a plurality of nets in the layout. Each of the nets includes a subset of the one or more metal lines. The method also includes determining one or more current values drawn only within the one or more nets and comparing the determined one or more current values drawn with corresponding threshold values. Based on the comparison, an indication is provided whether or not the layout is compliant. A pattern of the one or more metal lines in the compliant layout is transferred to a mask to be used in the manufacturing of the circuit on a substrate.
公开/授权文献
- US20170220725A1 Optimized Electromigration Analysis 公开/授权日:2017-08-03
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