Invention Grant
- Patent Title: Charged particle beam writing method and charged particle beam writing apparatus
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Application No.: US15888118Application Date: 2018-02-05
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Publication No.: US10460909B2Publication Date: 2019-10-29
- Inventor: Haruyuki Nomura
- Applicant: NuFlare Technology, Inc.
- Applicant Address: JP Yokohama-shi
- Assignee: NuFlare Technology, Inc.
- Current Assignee: NuFlare Technology, Inc.
- Current Assignee Address: JP Yokohama-shi
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-050094 20170315
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/04 ; H01J37/24 ; H01J37/09 ; H01J37/10

Abstract:
In one embodiment, a charged particle beam writing apparatus includes a current limiting aperture, a blanking deflector switching between beam ON and beam OFF so as to control an irradiation time by deflecting the charged particle beam having passed through the current limiting aperture, a blanking aperture blocking the charged particle beam deflected by the blanking deflector in such a manner that the beam OFF state is entered, and an electron lens disposed between the current limiting aperture and the blanking aperture. A lens value set for the electron lens is substituted into a given function to calculate an offset time. The offset time is added to an irradiation time for writing a pattern to correct the irradiation time. The blanking deflector switches between the beam ON and the beam OFF based on the corrected irradiation time.
Public/Granted literature
- US20180269034A1 CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS Public/Granted day:2018-09-20
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