Invention Grant
- Patent Title: Etchant composition and method of manufacturing a thin film transistor substrate by using the same
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Application No.: US15005614Application Date: 2016-01-25
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Publication No.: US10465296B2Publication Date: 2019-11-05
- Inventor: Soomin An , Youngjun Kim , Hongsick Park , Inseol Kuk , Youngchul Park , Inho Yu , Seungsoo Lee , Jongmun Lee , Daesung Lim
- Applicant: Samsung Display Co., Ltd. , Dongwoo Fine-Chem Co., Ltd.
- Applicant Address: KR Yongin-si KR Iksan-si
- Assignee: Samsung Display Co., Ltd.,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.,Dongwoo Fine-Chem Co., Ltd.
- Current Assignee Address: KR Yongin-si KR Iksan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2015-0108146 20150730
- Main IPC: C23F1/18
- IPC: C23F1/18 ; C23F1/26 ; H01L27/12 ; H01L21/3213 ; H01L29/49

Abstract:
An etchant composition includes an etchant composition that includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of an inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.1 wt % to about 10 wt % of an aliphatic sulfonic acid, about 1 wt % to about 20 wt % of an organic acid or an organic acid salt, and water based on a total weight of the etchant composition.
Public/Granted literature
- US20170029958A1 ETCHANT COMPOSITION AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE BY USING THE SAME Public/Granted day:2017-02-02
Information query
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