- 专利标题： Semiconductor memory device
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申请号： US15693433申请日： 2017-08-31
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公开(公告)号： US10475809B2公开(公告)日： 2019-11-12
- 发明人: Takamasa Ito , Toshiaki Fukuzumi
- 申请人： Toshiba Memory Corporation
- 申请人地址： JP Tokyo
- 专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人： TOSHIBA MEMORY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Kim & Stewart LLP
- 优先权： JP2016-217885 20161108
- 主分类号： H01L27/11582
- IPC分类号： H01L27/11582 ; H01L23/522 ; H01L23/528 ; H01L27/1157 ; H01L27/11565
摘要：
A semiconductor memory device includes a first electrode layer extending in a first direction, a second electrode layer above the first electrode layer and extending in the first direction, a third electrode layer above the first electrode layer and extending in the first direction, an insulating member between the second and third electrode layers and extending in the first direction, first semiconductor members extending in the second direction through the first and second electrodes, second semiconductor members extending in the second direction through the first and third electrode layers, and third semiconductor members extending in the second direction, each having a first portion between the second and third electrode layers and in contact with the insulating member, and a second portion extending through the first electrode layer. In the first direction, an arrangement density of the third semiconductor members is lower than that of the first or second semiconductor member.
公开/授权文献
- US20180130820A1 SEMICONDUCTOR MEMORY DEVICE 公开/授权日：2018-05-10
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