Invention Grant
- Patent Title: Transistor with receded conductor, semiconductor device, and electronic device
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Application No.: US15494850Application Date: 2017-04-24
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Publication No.: US10475818B2Publication Date: 2019-11-12
- Inventor: Yoshinori Ando , Shinpei Matsuda , Yuki Hata
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2016-091109 20160428; JP2016-197828 20161006
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/786 ; H01L27/105 ; H01L29/423
Abstract:
A semiconductor device capable of retaining data for a long time is provided. A first transistor and a second transistor having different electrical characteristics from those of the first transistor are provided over the same layer without an increase in the number of manufacturing steps.
Public/Granted literature
- US20170317111A1 TRANSISTOR, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2017-11-02
Information query
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