Invention Grant
- Patent Title: Method of forming crystalline oxides on III-V materials
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Application No.: US15359480Application Date: 2016-11-22
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Publication No.: US10475930B2Publication Date: 2019-11-12
- Inventor: Wei-E Wang , Mark S. Rodder , Robert M. Wallace , Xiaoye Qin
- Applicant: Samsung Electronics Co., Ltd. , Board of Regents, The University of Texas System
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.,Board of Regents, The University of Texas System
- Current Assignee: Samsung Electronics Co., Ltd.,Board of Regents, The University of Texas System
- Current Assignee Address: KR Gyeonggi-do
- Agency: Van Pelt, Yi & James LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/12 ; H01L29/786 ; H01L21/02 ; H01L29/04
Abstract:
A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.
Public/Granted literature
- US20180053859A1 METHOD OF FORMING CRYSTALLINE OXIDES ON III-V MATERIALS Public/Granted day:2018-02-22
Information query
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