Invention Grant
- Patent Title: Resistive random access memory structure
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Application No.: US14610691Application Date: 2015-01-30
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Publication No.: US10475998B2Publication Date: 2019-11-12
- Inventor: Chern-Yow Hsu , Fu-Ting Sung , Shih-Chang Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a bottom electrode having a first width and a dielectric structure having a second width formed over the bottom electrode. The semiconductor structure further includes a top electrode having a third width formed over the dielectric structure. In addition, the second width of the dielectric structure is greater than the first width of the bottom electrode.
Public/Granted literature
- US20160225986A1 RESISTIVE RANDOM ACCESS MEMORY STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2016-08-04
Information query
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