- 专利标题: Method of manufacturing a battery, battery and integrated circuit
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申请号: US15210454申请日: 2016-07-14
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公开(公告)号: US10476112B2公开(公告)日: 2019-11-12
- 发明人: Rafael Janski , Kamil Karlovsky , Susanne Kraeuter , Michael Sorger
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 优先权: DE102015111498 20150715
- 主分类号: H01M10/42
- IPC分类号: H01M10/42 ; H01M4/38 ; H01L27/06 ; H01M4/66 ; H01M10/052 ; H01M10/058 ; H01M6/40
摘要:
A method of manufacturing a battery includes defining an active region and a bonding area in a first main surface of a first semiconductor substrate, forming a first ditch in the bonding area, forming an anode at the first semiconductor substrate in the active region, and forming a cathode at a carrier comprising an insulating material. The method further includes stacking the first semiconductor substrate and the carrier so that the first main surface of the first semiconductor substrate is disposed on a side adjacent to a first main surface of the carrier, a cavity being formed between the first semiconductor substrate and the carrier, and forming an electrolyte in the cavity.