- 专利标题: Power semiconductor device
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申请号: US15758349申请日: 2015-12-04
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公开(公告)号: US10483175B2公开(公告)日: 2019-11-19
- 发明人: Shoko Araki , Yukimasa Hayashida , Ryutaro Date
- 申请人: Mitsubishi Electric Corporation
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Studebaker & Brackett PC
- 国际申请: PCT/JP2015/084132 WO 20151204
- 国际公布: WO2017/094180 WO 20170608
- 主分类号: H01L23/053
- IPC分类号: H01L23/053 ; H01L23/04 ; H01L25/07 ; H01L25/18 ; H05K7/06 ; H01L23/00
摘要:
An object of the present invention to provide a technique which can put flexibility into positions, positional relationships, and sizes of constituent elements. A power semiconductor device includes: a substrate on which a semiconductor chip is disposed; an electrode which has one end fixed to the substrate and stands upright on the substrate; and an insulating case which houses the electrode and has a part opposed to the other end of the electrode. The power semiconductor device includes a conductive nut which is inserted into the case in the part of the case and a conductive component which electrically connects the other end of the electrode and the nut.
公开/授权文献
- US20180261517A1 POWER SEMICONDUCTOR DEVICE 公开/授权日:2018-09-13
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