Invention Grant
- Patent Title: Semiconductor chip
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Application No.: US15791709Application Date: 2017-10-24
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Publication No.: US10483224B2Publication Date: 2019-11-19
- Inventor: Jeong-gi Jin , Nae-in Lee , Jum-yong Park , Jin-ho Chun , Seong-min Son , Ho-jin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2016-0151306 20161114
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L25/065 ; H01L25/10

Abstract:
A semiconductor chip includes a semiconductor substrate including a bump region and a non-bump region, a bump on the bump region, and a passivation layer on the bump region and the non-bump region of the semiconductor substrate. No bump is on the non-bump region. A thickness of the passivation layer in the bump region is thicker than a thickness of the passivation layer in the non-bump region. The passivation layer includes a step between the bump region and the non-bump region.
Public/Granted literature
- US20180138137A1 SEMICONDUCTOR CHIP Public/Granted day:2018-05-17
Information query
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