- Patent Title: Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methods
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Application No.: US15957594Application Date: 2018-04-19
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Publication No.: US10483407B2Publication Date: 2019-11-19
- Inventor: Fei Wang , Kunal Shrotri , Jeffery B. Hull , Anish A. Khandekar , Duo Mao , Zhixin Xu , Ee Ee Eng , Jie Li , Dong Liang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/1157 ; H01L29/66 ; G11C16/04 ; G11C16/08 ; H01L29/792
Abstract:
A method of forming Si3Nx, where “x” is less than 4 and at least 3, comprises decomposing a Si-comprising precursor molecule into at least two decomposition species that are different from one another, at least one of the at least two different decomposition species comprising Si. An outer substrate surface is contacted with the at least two decomposition species. At least one of the decomposition species that comprises Si attaches to the outer substrate surface to comprise an attached species. The attached species is contacted with a N-comprising precursor that reacts with the attached species to form a reaction product comprising Si3Nx, where “x” is less than 4 and at least 3. Other embodiments are disclosed, including constructions made in accordance with method embodiments of the invention and constructions independent of method of manufacture.
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