- 专利标题： Memory device for generating word line signals having varying pulse widths
-
申请号： US16397547申请日： 2019-04-29
-
公开(公告)号： US10515677B2公开(公告)日： 2019-12-24
- 发明人: Hyunsung Hong
- 申请人： Taiwan Semiconductor Manufacturing Company Limited
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人： Taiwan Semiconductor Manufacturing Company Limited
- 当前专利权人地址： TW Hsinchu
- 代理机构： Jones Day
- 主分类号： G11C8/08
- IPC分类号： G11C8/08 ; G11C8/10 ; G11C8/18 ; G11C7/06 ; G11C7/22 ; H03K5/133 ; G11C7/08 ; G11C7/18
摘要：
A memory device includes a plurality of memory cells, a plurality of word lines, and a word line driver. The word lines are respectively coupled to the memory cells. The word line driver is configured to respectively drive the word lines with word line signals that have varying pulse widths.
公开/授权文献
信息查询
