- 专利标题： Method for forming stressor, semiconductor device having stressor, and method for forming the same
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申请号： US15454118申请日： 2017-03-09
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公开(公告)号： US10516050B2公开(公告)日： 2019-12-24
- 发明人: Che-Wei Yang , Hao-Hsiung Lin , Samuel C. Pan
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , National Taiwan University
- 申请人地址： TW Hsinchu TW Taipei
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- 当前专利权人地址： TW Hsinchu TW Taipei
- 代理机构： McDermott Will & Emery LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/10 ; H01L29/267 ; H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L29/06 ; H01L29/36
摘要：
A semiconductor device includes a semiconductor fin protruding from a substrate, a gate electrode over the semiconductor fin, a gate insulating layer between the semiconductor fin and the gate electrode, source and drain regions disposed on opposite sides of the semiconductor fin, a first stressor formed in a region between the source and drain regions. The first stressor including one material selected from the group consisting of He, Ne, and Ga.
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